underside view pad 1 C source pad 2 C drain pad 3 C gate low noise n-channel jfet designed for sensitive amplifier stages in a hermetically sealed package for high reliability applications features ? low cutoff voltage high input impedance very low noise high gain cecc screening options jan level screening options applications: ? high gain, low noise amplifiers ? low current, low voltage battery powered amplifiers ? ultrahigh input impedance pre- amplifier s to-46 (to-206aa) mechanical data dimensions in mm (inches) 2N4339 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk document number 3887 issue 1 absolute maximum ratings (t case = 25c unless otherwise stated) v ds drain C source voltage 50v v dg drain C gate voltage 50v v gs gate C source voltage 50v i g gate current 50ma p d total device dissipation at t amb = 25c 300mw derate above 25c 2mw/c t j operating temperature range C55 to +175c t stg storage temperature range C65 to +200c 1 3 2 2.54 (0.100) nom. 0.48 (0.019) 0.41 (0.016) dia. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) 5.33 (0.210) 4.32 (0.170) 12.7 (0.500) min. semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders.
2N4339 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk document number 3887 issue 1 off electrical characteristics (t case = 25 c unless otherwise stated) parameter test conditions min. typ. max. unit v ( br)gss gate-source breakdown voltage i g = -1a 50 v i gss gate reverse current v gs = -30v 0.1 na v gs(off) gate-source cutoff voltage v ds = 15v i d = 0.1a -0.6 -1.8 v small signal characteristics parameter test conditions min. typ. max. unit |y fs | forward transfer admittance 800 2400 |y os | output admittance v ds = 15v f = 1.0khz 15 s c iss input capacitance 6.0 c rss reverse transfer capacitance v ds = 15v f = 1.0khz 2.0 pf r ds(on) drain source on resistance v ds = 0v f = 1.0khz 1700 v gs = 0v semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. functional characteristics parameter test conditions min. typ. max. unit nf noise figure 1.0 db v ds = 15v f = 1.0khz r g = 1.0m on electrical characteristics parameter test conditions min. typ. max. unit i dss zero gate voltage drain current v ds = 15v 0.5 1.5 ma
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